Mr. Neelesh Jain

  • Designation:  Assistant Professor
  • Employee ID: 3305280
  • Qualification: BE, MTech, PhD (Thesis Submitted)
  • Date of joining: 21/07/2025
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  •  Detailed Profile
About Faculty: Research Area: III-V Ternary and Quaternary Alloys, Infrared Detectors, Photovoltaic devices, Photodetectors, Solar Cells Area of Expertise: VLSI Design, EDA Tools, HDLs languages
Education and Qualification:
Doctor of Philosophy (PhD) – (Thesis Submitted) in Electronics & Communication Engineering
PDPM Indian Institute of Information Technology, Design and Manufacturing (PDPM IIITDM), Jabalpur, Madhya Pradesh, India - 482005
Year of Completion - 2025
Thesis Title: Computational Analysis of Optoelectronic Properties of III-V Ternary and Quaternary Alloys for Photovoltaic and Photodetector Applications

Master of Technology (MTech) – Microelectronics & VLSI Design
Shri Govindram Seksaria Institute of Technology & Science (SGSITS), Indore, Madhya Pradesh, India - 452003, Year of Completion- 2019.

Bachelor of Engineering (BE) – Electronics & Communication Engineering
Shri Vaishnav Institute of Technology & Science (SVITS), Indore, Madhya Pradesh, India - 452010, Year of Completion- 2014.
Work Experience: 1. Teaching Assistantship during PhD program [Jan 2021 - June 2025]
• Designed and delivered undergraduate and graduate lab sessions in [EDA Tools: Cadence Virtuoso Toolbox, Sentaurus TCAD, Xilinx Design suite].
• Supervised student projects.

2. Senior Research Fellow (SRF), Electronics & Communication Engineering
PDPM Indian Institute of Information Technology, Design and Manufacturing (PDPM IIITDM), Jabalpur, Madhya Pradesh, India – 482005 [Oct-Dec 2020]

3. Junior Research Fellow (JRF), Electronics & Communication Engineering
PDPM Indian Institute of Information Technology, Design and Manufacturing (PDPM IIITDM), Jabalpur, Madhya Pradesh, India – 482005 [Feb-Aug 2020]
Research Details: RESEARCH INTERESTS

• Optoelectronic characteristics of III-V based Ternary and Quaternary Alloys.
• Modelling of III-V-Bi based Photodetectors.
• Exploration of III-V-N-Bi based Quaternary alloys using multi band k.p Hamiltonian.

TECHNICAL SKILLS

• EDA Tools: Cadence Virtuoso, Xilinx Design suit, Sentaurus TCAD, Tanner Tool, HDLs languages.
• Research & Analysis Tools: MATLAB Programming, WIEN2k, COMSOL Multiphysics, SCAPS-1D.
Publications:
Patent
Neelesh Jain, Indranil Mal, Sadhna Singh, and DP Samajdar, “A system and method for fabricating a planar solar cell using InPBi alloy” submitted application no. as 202421028838 and RQ filed completed.

SCI Journals
➢ Neelesh Jain, Dip Prakash Samajdar, “Design principles for short-wave infrared InP1-xBix PIN photodetector using finite element method”, Materials Science & Engineering B, 323, 118896 (2025).
➢ Neelesh Jain, Indranil Mal, Sadhna Singh, Dip Prakash Samajdar, “Photovoltaic functionality assessment of InPBi-based solar cells using a combination of density functional theory and finite element method analysis”, Solar Energy, vol 285, 113092 (2024).
➢ Neelesh Jain, Indranil Mal, Hidouri Tarek, and DP Samajdar “A Systematic Investigation of the Optoelectronic Properties of InAsNBi/InAs Quantum Confined Heterostructure in the Presence of Hydrostatic Pressure for Long Wavelength Infrared Sensing”, Optical and Quantum Electronics, vol 56 (8), pages 1291 (2024).
➢ Neelesh Jain, Indranil Mal, DP Samajdar, and Navjeet Bagga, “Theoretical Exploration of the Optoelectronic Properties of InAsNBi/InAs heterostructures for Infrared Applications: A Multi-Band k·p Approach” Materials Science in Semiconductor Processing, vol 148 (06822) 2022.

Book Chapters
➢ Neelesh Jain, and DP Samajdar, “Exploration of Optoelectronic Properties and Design of GaPBi PIN Photodetector for Mid-infrared Applications” in Lecture Notes in Mechanical Engineering. Proceedings of the 8th International Conference on Manufacturing, Material and Metallurgical Engineering (ICMMME) 2024 pages 169-178.
➢ Neelesh Jain, Indranil Mal, DP Samajdar, and Navjeet Bagga “Investigation of Optical and Electronic Properties of InAsNBi for Infrared Detection” in Tailored Functional Materials, pages 475- 484, 2022.

CONFERENCES & WORKSHOPS
• Attended “12th International Conference on Nano and Materials Science (ICNMS)”, held at January 12-15, 2024, Bangkok presented a paper with entitled “Exploration of Optoelectronic Properties and Design of GaPBi PIN Photodetector for Mid-infrared Applications”.
• Attended “International Symposium on Materials of the Millennium: Emerging Trends and Future Prospects (MMETFP-2021)” held at Pandit Deendayal Energy University, Gandhinagar, Gujrat, India during November 19-21, 2021 presented a paper with entitled “Investigation of Optical and Electronic Properties of InAsNBi for Infrared Detection”
• Participated in Online Workshop on “D.F.T. investigation of the electronic structure using Quantum Espresso and BURAI Software (Atoms, Molecules, Compounds and Crystalline Materials)” during 09 - 17 February 2022, jointly organized by: Centre for Research, Innovation and Training (CRIT), IIS (deemed to be UNIVERSITY), Jaipur and Gramin Mahila Mahavidyalaya, Sikar (Rajasthan)
• Participated in long week short-term courses on “Analog IC Design - Circuit and Layout Design Methodologies using Cadence Design Flow” (8th January to 12th January 2019) Organized by School of Electronics and Institute of Engineering & Technology, Devi Ahilya University, Indore.
Other Details:  MEMBERSHIPS & AFFILIATIONS

• Vice Chair, IEEE Student Branch, PDPM IIITDM Jabalpur [form Nov 2024]
• Vice Chair, IEEE Nanotechnology Council (NTC), PDPM IIITDM Jabalpur [from June 2023]
• President, OPTICA Student Chapter, PDPM IIITDM Jabalpur [from June 2023]
• Treasurer, IEEE Nanotechnology Council (NTC), PDPM IIITDM Jabalpur [September 2021-May 2023]
• Treasurer, OPTICA Student Chapter, PDPM IIITDM Jabalpur [September 2021-May 2023]

AWARDS & HONORS

• Shortlisted for JENESYS Program twice (2022 and 2023) under AFS Intellectual Program, Government of India
• Received Institutional Grant to attend ICNMS 2024 Conference, Bangkok, Thailand (Jan 2024)